JPH0117268B2 - - Google Patents

Info

Publication number
JPH0117268B2
JPH0117268B2 JP55060490A JP6049080A JPH0117268B2 JP H0117268 B2 JPH0117268 B2 JP H0117268B2 JP 55060490 A JP55060490 A JP 55060490A JP 6049080 A JP6049080 A JP 6049080A JP H0117268 B2 JPH0117268 B2 JP H0117268B2
Authority
JP
Japan
Prior art keywords
region
emitter
thyristor
effect transistor
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55060490A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55162281A (en
Inventor
Teihani Iene
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS55162281A publication Critical patent/JPS55162281A/ja
Publication of JPH0117268B2 publication Critical patent/JPH0117268B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors

Landscapes

  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
JP6049080A 1979-05-31 1980-05-07 Light controlled thyristor Granted JPS55162281A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2922301A DE2922301C2 (de) 1979-05-31 1979-05-31 Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung

Publications (2)

Publication Number Publication Date
JPS55162281A JPS55162281A (en) 1980-12-17
JPH0117268B2 true JPH0117268B2 (en]) 1989-03-29

Family

ID=6072219

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6049080A Granted JPS55162281A (en) 1979-05-31 1980-05-07 Light controlled thyristor

Country Status (3)

Country Link
EP (1) EP0021086B1 (en])
JP (1) JPS55162281A (en])
DE (1) DE2922301C2 (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5747836A (en) * 1995-09-11 1998-05-05 Sharp Kabushiki Kaisha Semiconductor integrated circuit provided with thyristor

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2945335A1 (de) * 1979-11-09 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor
US4489340A (en) * 1980-02-04 1984-12-18 Nippon Telegraph & Telephone Public Corporation PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions
DE3019907A1 (de) * 1980-05-23 1981-12-03 Siemens AG, 1000 Berlin und 8000 München Lichtsteuerbarer zweirichtungsthyristor
DE3112940A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor mit anschaltbarer innerer stromverstaerkerung und verfahren zu seinem betrieb
DE3226613A1 (de) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf
DE3226624A1 (de) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf und hoher kritischer spannungsanstiegsgeschwindigkeit
DE3240564A1 (de) * 1982-11-03 1984-05-03 Licentia Patent-Verwaltungs-Gmbh Steuerbares halbleiterschaltelement
US4553041A (en) * 1983-08-22 1985-11-12 Motorola, Inc. Monolithic zero crossing triac driver
JPH0779159B2 (ja) * 1984-03-22 1995-08-23 潤一 西澤 光トリガ・光クエンチ可能なサイリスタ装置
DE3431817C2 (de) * 1984-08-30 1986-07-10 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Lichtzündbarer Thyristor
JPS61137365A (ja) * 1984-12-08 1986-06-25 Semiconductor Res Found 光トリガ・光クエンチ静電誘導サイリスタ
JPS61270867A (ja) * 1985-05-25 1986-12-01 Matsushita Electric Works Ltd 半導体装置
DE3926200A1 (de) * 1989-08-08 1991-02-14 Siemens Ag Lichtsteuerbares halbleiterbauelement mit einem feldeffekttransistor
JP3016302B2 (ja) * 1992-04-23 2000-03-06 日本電気株式会社 ｐｎｐｎ半導体素子とその駆動回路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE338611B (en]) * 1969-09-01 1971-09-13 Asea Ab
JPS4883768U (en]) * 1972-01-18 1973-10-12
JPS5641186B2 (en]) * 1972-03-03 1981-09-26
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS5933986B2 (ja) * 1975-09-12 1984-08-20 三菱電機株式会社 半導体装置
JPS53159275U (en]) * 1977-05-20 1978-12-13

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5747836A (en) * 1995-09-11 1998-05-05 Sharp Kabushiki Kaisha Semiconductor integrated circuit provided with thyristor
DE19636553C2 (de) * 1995-09-11 2001-02-08 Sharp Kk Integrierte Halbleiterschaltung mit Thyristor

Also Published As

Publication number Publication date
JPS55162281A (en) 1980-12-17
DE2922301C2 (de) 1985-04-25
DE2922301A1 (de) 1980-12-04
EP0021086A1 (de) 1981-01-07
EP0021086B1 (de) 1983-05-18

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